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Method of forming SI tip by single etching process and its application for forming floating gate
Method of forming SI tip by single etching process and its application for forming floating gate
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机译:单蚀刻工艺形成硅电极头的方法及其在浮栅形成中的应用
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摘要
The invention provides a method of forming a silicon tip by a single etching process, as well as a method of forming a tip floating gate to increase erase speed. Etching gases comprising (1) chlorine and/or (2) oxygen/helium are performed to form a silicon tip without bottom dimple. The invention may further control the tip angle by adjusting the etching parameters of gas compositions and ratios, chamber pressures, and radio frequency powers.
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