In one embodiment, an inertial switch of the invention includes a MEMS device manufactured using a layered wafer. The MEMS device has a movable electrode supported on a substrate layer of the wafer and a stationary electrode attached to that substrate layer. The movable electrode is adapted to move with respect to the substrate layer in response to an inertial force such that, when the inertial force per unit mass reaches or exceeds a contact threshold value, the movable electrode is brought into contact with the stationary electrode, thereby changing the state of the inertial switch from open to closed. In one embodiment, the MEMS device is a substantially planar device, designed such that, when the inertial force is parallel to the device plane, the displacement amplitude of the movable electrode from an initial position is substantially the same for all force directions. Advantageously, inertial switches of the invention can be designed to have a relatively small size, e.g., less than one millimeter, and be relatively inexpensive. Due to the small size and low cost, several inertial switches of the invention may be incorporated into a corresponding switch circuit, thereby providing protection against mechanical failure and/or malfunction of any individual inertial switch in that circuit.
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