首页>
外国专利>
Avoiding field oxide gouging in shallow trench isolation (STI) regions
Avoiding field oxide gouging in shallow trench isolation (STI) regions
展开▼
机译:避免浅沟槽隔离(STI)区域中的场氧化物气刨
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method and device for avoiding oxide gouging in shallow trench isolation (STI) regions of a semiconductor device. A trench may be etched in an STI region and filled with insulating material. An anti-reflective coating (ARC) layer may be deposited over the STI region and extend beyond the boundaries of the STI region. A portion of the ARC layer may be etched leaving a remaining portion of the ARC layer over the STI region and extending beyond the boundaries of the STI region. A protective cap may be deposited to cover the remaining portion of the ARC layer as well as the insulating material. The protective cap may be etched back to expose the ARC layer. However, the protective cap still covers and protects the insulating material. By providing a protective cap that covers the insulating material, gouging of the insulating material in STI regions may be avoided.
展开▼