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Method and apparatus for determining the temperature of a junction using voltage responses of the junction and a correction factor

机译:使用结的电压响应和校正因子确定结的温度的方法和装置

摘要

Method and system for periodically measuring the junction temperature of a semiconductor device. The junction is excited by at least two sequential predetermined currents of different magnitudes. The voltage response of the junction to the at least two currents is measured and the temperature of the junction is calculated, while substantially canceling ohmic effects, by using the voltage response and a correction factor. Whenever desired, the junction is excited by a set of at least four sequential different currents having known ratios. The voltage response to the set is measured and the correction factor is calculated by using each voltage response to the set.
机译:用于周期性地测量半导体器件的结温的方法和系统。所述结由至少两个不同大小的顺序的预定电流激励。通过使用电压响应和校正因子,测量了结对至少两个电流的电压响应并计算了结的温度,同时基本上消除了欧姆效应。无论何时需要,结都会被一组至少四个具有已知比率的顺序不同电流激励。测量对组的电压响应,并通过使用对组的每个电压响应来计算校正因子。

著录项

  • 公开/公告号US7170275B1

    专利类型

  • 公开/公告日2007-01-30

    原文格式PDF

  • 申请/专利权人 OHAD FALIK;

    申请/专利号US20050085828

  • 发明设计人 OHAD FALIK;

    申请日2005-03-21

  • 分类号G01R31/02;G01R27/02;G01N27/00;

  • 国家 US

  • 入库时间 2022-08-21 21:00:07

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