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Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
Deep wordline trench to shield cross coupling between adjacent cells for scaled NAND
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机译:深字线沟槽可屏蔽相邻单元之间的交叉耦合,以实现按比例缩放的NAND
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摘要
A NAND flash memory structure with a wordline or control gate that provides shielding from Yupin effect errors and generally from potentials in adjacent strings undergoing programming operations with significant variations in potential.
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