Device for implantation of u00econs in a piece of alloy of alumu00ecnio and treatment process of an alloy of alumu00ecnio

摘要

Device for implantation of u00econs in a piece of alloy of alumu00ecnio and treatment process of an alloy of alumu00ecnio the invention refers to a device for implatau00e7u00e3o of ions in a piece of aluminium alloy (5) which includes a source of u00a2ions (6) which supplies ions accelerated by a The extraction voltage and first means of adjustment (7 - 11) of an initial beam (F1 ') issued by the font ions(6) in a beam of implatau00e7u00e3o (F1). The source (6) is an electronic cyclotron resonance source that produces the initial beam (F1 ') of multi energy ion are implanted in the piece (5) at a temperature below 120 198.The implatau00e7u00e3o of multi energy ion beam implatau00e7u00e3o (F1) governed by means of said adjustment means (7 - 11) is carried out simultaneously to a depth controlled by tension of the extraction of the source.