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INTEGRATED CIRCUIT CHIPS UTILIZING CARBON NANOTUBE COMPOSITE INTERCONNECTION VIAS

机译:利用碳纳米管复合互连技术的集成电路芯片

摘要

Conductive paths in an integrated circuit are formed using multiple undifferentiated carbon nanotubes embedded in a conductive metal, which is preferably copper. Preferably, conductive paths include vias running between conductive layers. Preferably, composite vias are formed by forming a metal catalyst pad on a conductor at the via site, depositing and etching a dielectric layer to form a cavity, growing substantially parallel carbon nanotubes on the catalyst in the cavity, and filling the remaining voids in the cavity with copper. The next conductive layer is then formed over the via hole
机译:使用嵌入在优选为铜的导电金属中的多个未分化的碳纳米管形成集成电路中的导电路径。优选地,导电路径包括在导电层之间延伸的通孔。优选地,通过以下方式形成复合通孔:在通孔位置的导体上形成金属催化剂垫,沉积并蚀刻介电层以形成空腔,在空腔中的催化剂上生长基本上平行的碳纳米管,并填充在空腔中的剩余空隙。铜腔。然后在通孔上方形成下一个导电层

著录项

  • 公开/公告号IN2006CN03548A

    专利类型

  • 公开/公告日2007-06-15

    原文格式PDF

  • 申请/专利权人

    申请/专利号IN3548/CHENP/2006

  • 发明设计人

    申请日2006-09-26

  • 分类号H01L21/285;

  • 国家 IN

  • 入库时间 2022-08-21 20:58:00

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