Techniques to reduce the effects of the connections between storage elements adjacent rows of memory cells.

摘要

A method of operating a matrix of cells nonvolatile memory that stores data as different levels of charge in storage elements of load, wherein between adjacent groups of storage elements charge field coupling: programming data into a first group (35) of the storage elements of the load with a first set of storage levels (VL) along with an indication TB = L that has been used the first set of storage levels, thereafter programming data into a second group (39) of storage elements loaded with the first set of storage levels along with an indication that has been used the first set of storage levels, and then increase the charge levels of the first (35) of groups of charge storage elements from the first set of storage levels to a second set of storage levels and storing an indication (TB = H) that has been used the second set of storage levels.