首页> 外国专利> A NOVEL COMBO MEMORY DESIGN AND TECHNOLOGY FOR MULTIPLE-FUNCTION JAVA CARD, SIM-CARD BIO-PASSPORT AND BIO-ID CARD APPLICATIONS

A NOVEL COMBO MEMORY DESIGN AND TECHNOLOGY FOR MULTIPLE-FUNCTION JAVA CARD, SIM-CARD BIO-PASSPORT AND BIO-ID CARD APPLICATIONS

机译:多功能JAVA卡,SIM卡生物护照和BID卡应用的新型COMBO存储器设计和技术

摘要

A combination volatile and nonvolatile memory integrated circuit has at least one volatile memory array placed on the substrate and multiple nonvolatile memory arrays. The volatile and nonvolatile memory arrays have address space associated with each other such that each array may be addressed with common addressing signals. The combination volatile and nonvolatile memory integrated circuit further has a memory control circuit in communication with external circuitry to receive address, command, and data signals. The memory control circuit interprets the address, command, and data signals, and for transfer to the volatile memory array and the nonvolatile memory arrays for reading, writing, programming, and erasing the volatile and nonvolatile memory arrays. The volatile memory arrays is may be a SRAM, a pseudo SRAM, or a DRAM. Any of the nonvolatile memory arrays maybe masked programmed ROM arrays, NAND configured flash memory NAND configured EEPROM.
机译:易失性和非易失性存储器集成电路的组合具有至少一个置于衬底上的易失性存储器阵列和多个非易失性存储器阵列。易失性和非易失性存储器阵列具有彼此关联的地址空间,使得可以利用公共寻址信号来寻址每个阵列。易失性和非易失性存储器集成电路的组合还具有与外部电路通信以接收地址,命令和数据信号的存储器控​​制电路。存储器控制电路解释地址,命令和数据信号,并传输到易失性存储器阵列和非易失性存储器阵列,以读取,写入,编程和擦除易失性和非易失性存储器阵列。易失性存储器阵列可以是SRAM,伪SRAM或DRAM。非易失性存储器阵列中的任何一个都可以是屏蔽的编程ROM阵列,NAND配置的闪存,NAND配置的EEPROM。

著录项

  • 公开/公告号WO2006071869A3

    专利类型

  • 公开/公告日2007-08-30

    原文格式PDF

  • 申请/专利权人 APLUS FLASH TECHNOLOGY INC.;LEE PETER W.;

    申请/专利号WO2005US47084

  • 发明设计人 LEE PETER W.;

    申请日2005-12-22

  • 分类号G11C16/04;G11C7/00;G11C7/04;

  • 国家 WO

  • 入库时间 2022-08-21 20:52:24

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