首页> 外国专利> DENDRITE THICKNESS CONTROL SYSTEM FOR GROWING SILICON RIBBON

DENDRITE THICKNESS CONTROL SYSTEM FOR GROWING SILICON RIBBON

机译:硅色带生长枝晶厚度控制系统

摘要

A method and system for controlling the thickness of a pair of dendrites in a dendritic silicon web growth process to improve dendritic silicon web production. An image of each dendrite in a web emerging from a silicon melt in a furnace is produced by a pair of cameras focused on the dendrite pair. The dendrite images are digitized, the average thickness of the dendrites is calculated, and compared to set point parameters. The average difference between the dendrite thicknesses and the set point parameters is used to control the overall furnace temperature, while the differences between the thickness of each pair are used to control the lateral temperature distribution in the furnace in order to maintain the dendrite thickness within predetermined limits. The method can be used in a closed loop configuration to automatically control the furnace temperature and lateral temperature distribution; or in an open loop configuration to provide visible feedback information to an operator who manually adjusts the furnace temperature conditions.
机译:一种用于在树枝状硅纤维网生长过程中控制一对树枝状晶体的厚度以改善树枝状硅纤维网生产的方法和系统。由聚焦在枝晶对上的一对照相机产生从熔炉中的硅熔体出来的网中每个枝晶的图像。将枝晶图像数字化,计算枝晶的平均厚度,并将其与设定点参数进行比较。枝晶厚度和设定点参数之间的平均差用于控制炉子的总体温度,而每对厚度之间的差用于控制炉子的横向温度分布,以将枝晶厚度保持在预定范围内限制。该方法可以在闭环配置中使用,以自动控制炉温和横向温度分布。或采用开环配置,以向手动调整炉温条件的操作员提供可见的反馈信息。

著录项

  • 公开/公告号EP1196646B1

    专利类型

  • 公开/公告日2007-08-15

    原文格式PDF

  • 申请/专利权人 EBARA CORP;

    申请/专利号EP19990904551

  • 发明设计人 EASOZ JOHN R.;MUNSHOWER BARRY;

    申请日1999-02-02

  • 分类号C30B15/22;

  • 国家 EP

  • 入库时间 2022-08-21 20:49:59

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号