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Process to fabricate a Tool Insert for Injection Moulding a two-level microstructured Piece

机译:制造用于注塑两级微结构件的工具插件的方法

摘要

A silicon wafer (11) is given micro-structures on the leading side by plasma etching. The etching mask is removed. Openings are formed at the microstructures at both sides of the wafer. The etching mask is removed and the wafer is bonded to a carrier substrate (18) to form a master (19). Metal is deposited on the leading side of the wafer. The back (22) of the metal layer (21) is polished, and used as a mold insert for injection molding. To prepare a mold insert for injection molding a component with micro-structures, of plastics or metal or ceramic materials, a silicon wafer (11) is given micro-structures on the leading side by plasma etching to a given depth. The etching mask is removed, and micro structures are formed in the trailing side by plasma etching to shape hollows. Openings are formed at the microstructures at both sides of the wafer. The etching mask is removed and the wafer is bonded to a carrier substrate (18) of Pyrex (RTM) fireproof glass or a silicon wafer to form a master (19). Metal is deposited in an electrochemical action on the leading side of the wafer which also enters into the hollows at the trailing side. The back (22) of the metal layer (21) is polished, and then separated from the master to be used as a mold insert for injection molding.
机译:通过等离子体蚀刻在硅晶片(11)的前侧赋予了微结构。去除蚀刻掩模。在晶片两侧的微结构处形成开口。去除蚀刻掩模,并且将晶片结合到载体衬底(18)以形成母盘(19)。金属沉积在晶片的前侧。金属层(21)的背面(22)被抛光,并且用作用于注射成型的模具插件。为了制备用于注塑具有塑料,金属或陶瓷材料的具有微结构的部件的模具插件,通过等离子刻蚀在硅晶片(11)的前侧上将微结构赋予给定深度。去除蚀刻掩模,并通过等离子蚀刻在尾侧形成微结构以形成凹陷。在晶片两侧的微结构处形成开口。去除蚀刻掩模,并且将晶片粘结到派热克斯(RTM)防火玻璃或硅晶片的载体基板(18)上以形成母盘(19)。金属以电化学作用沉积在晶片的前侧,该前侧也进入后侧的空洞中。金属层(21)的背面(22)被抛光,然后与母模分离,以用作用于注射成型的模具插件。

著录项

  • 公开/公告号EP1422192B1

    专利类型

  • 公开/公告日2007-04-18

    原文格式PDF

  • 申请/专利权人 WEIDMANN PLASTICS TECHNOLOGY AG;

    申请/专利号EP20020079899

  • 发明设计人 GMUER MAX;

    申请日2002-11-25

  • 分类号B81C1/00;B29C45/03;B29C33/38;B29C33/42;B23P15/00;

  • 国家 EP

  • 入库时间 2022-08-21 20:49:21

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