In one aspect, a VCSEL (10) includes a base region (16) that has a vertical growth part (38) laterally adjacent a first optical reflector (14) and a lateral growth part (40) that includes nitride semiconductor material vertically over at least a portion of the first optical reflector (14). An active region (18) has at least one nitride semiconductor quantum well vertically over at least a portion of the lateral growth part (40) of the base region (16) and includes a first dopant of a first electrical conductivity type. A contact region (20) includes a nitride semiconductor material laterally adjacent the active region (18) and a second dopant of a second electrical conductivity type opposite the first electrical conductivity type. A second optical reflector (22) is vertically over the active region (18) and forms with the first optical reflector (14) a vertical optical cavity (28) overlapping at least a portion of the at least one quantum well (44, 46, 48) of the active region (18). A method of fabricating a VCSEL also is described.
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