METHOD FOR P LAYER CARRIER INTRINSIC DIFFUSION PREVENTION OF PHOTO DETECTOR

摘要

The present invention relates to a P layer carrier and an N layer carrier intrinsic semiconductor diffusion preventing method of an optical detector having a P layer (or N layer) energy band structure having an changed energy band gap. In the P layer carrier and the N layer carrier intrinsic semiconductor diffusion preventing method of the optical detector according to the present invention, the energy band gap in the P type semiconductor layer (or N type semiconductor layer) of the PIN (or NIP) type photodetector is intrinsic semiconductor layer. The energy band gap of the P-type semiconductor layer is gradually increased toward the intrinsic semiconductor layer, and is rapidly reduced in the area in contact with the intrinsic semiconductor layer. Such a structure can be utilized not only in the ultraviolet region but also in the photodetectors in all wavelength regions, and in the P-type semiconductor layer (or N-type semiconductor layer) by changing the energy band gap of the P-type semiconductor layer (or N-type semiconductor layer). By preventing the generated carriers from diffusing into the intrinsic semiconductor layer, the generated carriers do not contribute to the photocurrent corresponding to the output of the photodetector, the operation speed is increased, and only the light of the required wavelength range can be detected.;Photodetector, Photodiode, P-type Semiconductor, N-type Semiconductor, Intrinsic Semiconductor, Energy Band Gap, PIN, NIP