首页> 外国专利> FORCE SENSOR COMPRISING ORGANIC FIELD EFFECT TRANSISTORS AND PRESSURE SENSOR, POSITION SENSOR AND FINGERPRINT SENSOR THAT ARE BASED ON SAID FORCE SENSOR

FORCE SENSOR COMPRISING ORGANIC FIELD EFFECT TRANSISTORS AND PRESSURE SENSOR, POSITION SENSOR AND FINGERPRINT SENSOR THAT ARE BASED ON SAID FORCE SENSOR

机译:包含基于场力传感器的有机场效应晶体管和压力传感器,位置传感器和指纹传感器的力传感器

摘要

The invention relates to a force sensor based on an organic field effect transistor (10) that is applied to a substrate (1; 11). According to the invention, a mechanical force that acts on the transistor causes a corresponding modification of the source- drain voltage or the source-drain current (ID), whereby said modification can be respectively detected as a measured variable (Vmess, Imess) for the exerted force. The invention also relates to a membrane-based pressure sensor that uses a force sensor of this type, to a one- or two-dimensional position sensor that uses a plurality of force sensors of this type and to a fingerprint sensor that uses a plurality of force sensors of this type. ® KIPO & WIPO 2007
机译:本发明涉及一种基于有机场效应晶体管(10)的力传感器,该力传感器被应用于基板(1; 11)。根据本发明,作用在晶体管上的机械力引起源极-漏极电压或源极-漏极电流(ID)的相应改变,由此可以将所述改变分别检测为测量变量(Vmess,Imess),用于施加的力量。本发明还涉及使用这种力传感器的基于膜的压力传感器,使用多种力传感器的一维或二维位置传感器,以及使用多种力传感器的指纹传感器。这种类型的力传感器。 ®KIPO和WIPO 2007

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