首页> 外国专利> ACTIVE PIXEL SENSOR WITH BOOSTING CIRCUIT IN CMOS IMAGE SENSOR

ACTIVE PIXEL SENSOR WITH BOOSTING CIRCUIT IN CMOS IMAGE SENSOR

机译:CMOS图像传感器中具有引导电路的有源像素传感器

摘要

An active pixel sensor with a boosting circuit in a CMOS image sensor is provided to minimize a storage part of a storage node by forming the boosting circuit between a first transfer transistor and the storage node and/or between a second transfer transistor and a floating diffusion region. A photodiode part is used for receiving light and generating optical electric charges. A first transfer transistor part(110) is connected to the photodiode part in order to transfer the generated optical electric charges. A second transfer transistor part(110) is connected to the transfer transistor part in order to transfer the generated optical electric charges. A storage node part is connected between the first and second transfer transistors in order to store the optical electric charges of the first transfer transistor. A boosting circuit part(210) is connected between a gate terminal of the first transfer transistor and the storage node part.
机译:提供了一种在CMOS图像传感器中具有升压电路的有源像素传感器,以通过在第一转移晶体管和存储节点之间和/或在第二转移晶体管和浮置扩散层之间形成升压电路来最小化存储节点的存储部分。地区。光电二极管部件用于接收光并产生光电荷。第一转移晶体管部分(110)连接到光电二极管部分,以便转移产生的光电荷。第二转移晶体管部分(110)连接到转移晶体管部分,以便转移产生的光电荷。存储节点部分连接在第一和第二传输晶体管之间,以便存储第一传输晶体管的光电荷。升压电路部分(210)连接在第一传输晶体管的栅极端子和存储节点部分之间。

著录项

  • 公开/公告号KR20070073207A

    专利类型

  • 公开/公告日2007-07-10

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20060000862

  • 发明设计人 PARK JONG EUN;

    申请日2006-01-04

  • 分类号H01L27/146;

  • 国家 KR

  • 入库时间 2022-08-21 20:34:07

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