A JOINING METHOD AT LOW TEMPERATURE, A MOUNTING METHOD OF SEMICONDUCTOR PACKAGE USING THE JOINING METHOD, AND A SUBSTRATE JOINED STRUCTURE PREPARED BY THE JOINING METHOD

摘要

A low-temperature joining method, a method for mounting a semiconductor package using the same, and a substrate-joining structure prepared by the same are provided to prevent bending of a substrate by joining different junction compositions. A first junction composition including tin and silver is prepared, and then a second junction composition including tin and bismuth is prepared. The first junction composition comes in contact with the second junction composition. The compositions are subjected to thermal treatment at a temperature of 170°C or higher, thereby forming a junction having the first junction composition and the second junction composition in contact with each other. The first junction composition further comprises at least one metal selected from the group consisting of copper, indium and bismuth.