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METHOD OF PACKAGING OF MEMS DEVICE AT THE VACUUM STATE USING A SILICIDE BONDING

机译:使用硅键合在真空状态下封装MEMS设备的方法

摘要

A vacuum mounting method of a micro electro mechanical systems device using a silicide bonding is provided to prevent a leakage by performing a bonding at a low temperature. A vacuum mounting method of an MEMS(Micro Electro Mechanical Systems) device using a silicide bonding includes the steps of preparing a bottom silicon substrate where a silicon(100), an oxide layer(105), and another silicon(110) are simultaneously laminated, forming a metal layer, an amorphous silicon layer, and an adhering layer on the bottom silicon substrate, selectively etching the adhering layer, the amorphous silicon layer, and the metal layer to expose the bottom silicon substrate, forming the MEMS device inside of the bottom silicon substrate, arranging a top glass substrate, inside of a vacuum chamber, on which a cavity is formed on the bottom silicon substrate on which the MEMS device is formed, heat-treating top and bottom substrates, forming a first silicide by reacting the metal layer and the bottom silicon substrate, forming a second silicide by reacting the metal layer and the amorphous silicon layer, and adhering to the top and bottom substrates in a vacuum.
机译:提供一种使用硅化物键合的微机电系统装置的真空安装方法,以通过在低温下进行键合来防止泄漏。使用硅化物键合的MEMS(微机电系统)装置的真空安装方法包括准备底部硅基板的步骤,在该基板中同时层压硅(100),氧化物层(105)和另一硅(110)然后,在底部硅衬底上形成金属层,非晶硅层和粘附层,选择性地蚀刻粘附层,非晶硅层和金属层以暴露底部硅衬底,从而在衬底内部形成MEMS器件。底部硅基板,在真空室内布置有顶部玻璃基板,在其上形成有MEMS器件的底部硅基板上形成空腔,对顶部和底部基板进行热处理,通过使底部硅基板与底部硅基板反应而形成第一硅化物。金属层和底部硅衬底,通过使金属层和非晶硅层反应形成第二硅化物,并在真空中粘附到顶部和底部衬底。

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