System for measuring concentration distribution of impurity in semiconductor and measuring method thereof

摘要

A non-destructive system for measuring a concentration distribution of impurity in a semiconductor device and a measuring method thereof are provided to have a space resolution of nano scale and rapidly discriminate whether a doped impurity is n type or p type. A conductive thin film of high hardness is laminated at a silicon probe(10) to conduct an electricity. An amplifier(200) is connected to the silicon probe, and supplies an alternating current, and separates a thermoelectric voltage signal generated at a contact point between the silicon probe and a semiconductor device sample. A semiconductor sample fixture(300) is connected to a lower portion of the semiconductor device sample to conduct an electricity. A variable resistor(400) is connected to the semiconductor sample fixture and removes a drive voltage during measuring of a signal. An additional resistor(500) is connected to the variable resistor, and maintains an amplitude of an electric current while the probe scans a surface of the semiconductor sample.