PHASE-SHIFT PHOTO MASK BLANK, PHASE-SHIFT PHOTO MASK AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICES

摘要

phase shift photomask blank comprises a halftone phase shifting film , wherein the halftone phase shift film 2 or more for a configuration with a layer , and the second layer , the refractive index of the upper layer of the film is smaller than the refractive index of the lower layer , in the case of three layers , the refractive index of the intermediate layer is the upper layer and more than or the refractive index of the upper layer of the intermediate refractive index lower than that observed for was smaller than the case of four or more layers , the refractive index of the top layer is smaller than the refractive index of the layer just below the top layer . The photomask blank has a high transmittance and a low reflectance at the exposure wavelength also makes it possible to manufacture a phase shift photomask having a low transmittance at the defect inspection wavelength . Photo mask enables the fabrication of a semiconductor device as a result having a fine pattern .