EMBEDDED MEMORY INCLUDING THE SCAN FUNCTION AND COLUMN REDUNDANCY AND THE REDUNDANCY REPAIR AND SCAN METHODS USED BY THE EMBEDDED MEMORY

摘要

An embedded memory including and a redundancy repair and scan method are provided to reduce the area of an additional layout by performing a scan function and a column redundancy function in a conventional memory structure. A 0th memory block(201) includes a 0th cell array in order to output 0th cell array data, 0th group cell array data, and 0th group column selection signals. A first memory block(202) includes a first cell array in order to output first cell array data, first group cell array data, and first group column selection signals. An (M-2)th memory block(204) includes an (M-2)th cell array in order to output (M-2)th cell array data, (M-2)th group cell array data, and (M-2)th group column selection signals. An (M-1)th memory block(205) includes an (M-1)th cell array in order to output (M-1)th cell array data, (M-1)th group cell array data, and (M-1)th group column selection signals. A redundancy block(230) includes a redundancy cell array and outputs redundancy cell array data.