Image sensor with buried barrier layer having different thickness according to wavelength of light and method of formign the same

摘要

to prevent the color mixing phenomenon discloses an image sensor and a method which can improve the sensitivity . The sensor is provided with a wavelength of the pixels for implementing the different color , and each of the pixels is provided with a buried barrier layer having different thickness according to the wavelength , but the position in the photoelectric conversion portion and the lower photoelectric conversion section . A method of forming the sensor is provided with a step of forming the epitaxial layer and the buried barrier layer in the step of the first type for forming the epitaxial layer of a first type on a semiconductor substrate of a first type . At this time, the thickness of the buried barrier layer is formed differently depending on the wavelength .