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Semiconductor type thick film gas sensor device, and apparatus for measuring performance of a gas sensor device

机译:半导体型厚膜气体传感器装置及气体传感器装置的性能测定装置

摘要

In the semiconductor thick film gas sensor device according to the present invention, two or more sensors including an electrode and a sensing film are formed on the front of the substrate to form a sensor array, and a heater is formed on the back of the substrate, and the sensing material constituting the sensing film is oxidized. Include comments. Moreover, the performance measuring apparatus of the gas sensor element by this invention contains a 4-way valve and a mini reactor.;The semiconductor thick film gas sensor element has excellent selectivity against various gases, particularly chemical agents used in chemical terrorism. In addition, the performance measuring device of the gas sensor element minimizes the reaction time of the gas sensor element and the measurement gas.;Semiconductor thick film gas sensor, sensor array, tin oxide, alumina, indium oxide, zinc oxide, zirconium oxide, 4-way valve, mini reactor
机译:在根据本发明的半导体厚膜气体传感器装置中,包括电极和感测膜的两个或更多个传感器形成在基板的正面上以形成传感器阵列,并且加热器形成在基板的背面上。 ,构成传感膜的传感材料被氧化。包括评论。此外,本发明的气体传感器元件的性能测量装置包括四通阀和微型反应器。半导体厚膜气体传感器元件对各种气体,特别是用于化学恐怖主义的化学试剂具有优异的选择性。另外,气体传感器元件的性能测量装置使气体传感器元件和测量气体的反应时间最小化。半导体厚膜气体传感器,传感器阵列,氧化锡,氧化铝,氧化铟,氧化锌,氧化锆,四通阀,小型反应堆

著录项

  • 公开/公告号KR100696980B1

    专利类型

  • 公开/公告日2007-03-20

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20040085580

  • 发明设计人 이덕동;허증수;최락진;

    申请日2004-10-26

  • 分类号G01N27/14;

  • 国家 KR

  • 入库时间 2022-08-21 20:32:39

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