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Method for fabricating liquid crystal display device having high aperture ratio and high transmitance

机译:具有高开口率和高透射率的液晶显示装置的制造方法

摘要

This invention discloses a method for producing a high aperture ratio and high transmittance of the liquid crystal display device. Method of the disclosed invention, the step of depositing a transparent metal film and in turn opaque metal film on a transparent insulating substrate; The non-transparent second photosensitive film pattern having a relatively thin thickness than the first photoresist pattern while covering the gate line and the portion to be the first photosensitive film pattern and the counter electrode is formed to cover the portion to be a common signal line, including the light-shielding film formed on the metal film forming; Removing a portion of the thickness of the first and second photosensitive film is exposed using the pattern as an etch barrier metal film of opaque primarily by dry etching to form a gate line and the addition of the first and second photosensitive film pattern; Step of wet etching to form a counter electrode of a rectangular plate form an exposed part using a transparent metal film having a thickness of the removed part of the first and second photosensitive film pattern as an etching barrier; The counter electrode and the second dry etching process to the substrate formed of the first output portion of the thickness of the photoresist pattern and the second pattern such that the photoresist is completely removed and also addition, the second photosensitive film pattern is removed and the non-transparent metal film portion is exposed forming a common signal line, including the light-shielding film by etching; Characterized by comprising; and removing the remaining first photoresist pattern.
机译:本发明公开了一种用于制造高开口率和高透射率的液晶显示装置的方法。本发明的方法,包括在透明绝缘基板上沉积透明金属膜并进而沉积不透明金属膜的步骤;具有比第一光致抗蚀剂图案更薄的厚度的非透明第二光敏膜图案,同时覆盖栅极线和将要成为第一光敏膜图案的部分以及对电极形成为覆盖将要成为公共信号线的部分,包括形成在金属膜上的遮光膜;使用该图案作为不透明的蚀刻阻挡金属膜,主要通过干法蚀刻以形成栅极线并添加第一和第二感光膜图案来去除第一和第二感光膜的厚度的一部分。使用具有第一和第二感光膜图案的去除部分的厚度的透明金属膜作为刻蚀阻挡层的湿法刻蚀以形成矩形板的对电极的步骤形成暴露部分;对电极和第二干法蚀刻工艺对由第一输出部分的厚度形成的基板的光致抗蚀剂图案和第二图案的厚度被完全去除,并且此外,还去除了第二光敏膜图案并且非-通过刻蚀暴露出透明金属膜部分,从而形成包括遮光膜的公共信号线;具有以下特征:并去除剩余的第一光刻胶图案。

著录项

  • 公开/公告号KR100701655B1

    专利类型

  • 公开/公告日2007-03-29

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR19990049471

  • 发明设计人 윤영룡;박춘배;박성호;

    申请日1999-11-09

  • 分类号G02F1/1343;

  • 国家 KR

  • 入库时间 2022-08-21 20:32:33

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