Top-emitting Light Emitting Devices Using Nano-structured Multifunctional Ohmic Contact Layer And Method Of Manufacturing Thereof

摘要

The invention mitt-type light emitting device and relates to a method of manufacturing a nitride-based tower mitt-type light emitting devices is basically a substrate, n-type nitride-based cladding layer, the nitride-based active layer, p-type nitride-based cladding layer, nano the nitride-based tower the structure of versatility ohmic contact layer (Nano-structured multifunctional ohmic contact layer: NMOCL) are sequentially laminated is, and this versatility ohmic contact layer is a single layer (single layer), double-layer (Bi-layer), or a trilayer (Tri -layer consists of a) the zinc oxide in the form of a nano-structure is stacked on choesangwicheung. The multi-functional choesangwicheung the ohmic contact layer 10 is a transparent conductive nano-zinc oxide of 1-D nanostructures, such as nano-meters or more columns having a thickness (Nano-columnar), nano-Rad (Nanorod), or nanowire (Nanowire) (Nano- including structured Transparent Conducting Zinc Oxide). Wherein a multi-functional p-type or mitt-type nitride-based light emitting device and according to the manufacturing method versatility ohmic contact layer and the interfacial characteristic improvement excellent current to the tower using an n-type ohmic contact layer, as well as indicate the voltage characteristics, the present since the transparent conductive zinc oxide used for the nanostructures introduced in the invention, the external light emitting efficiency of the light emitting device: it is expected to increase (external Quantum efficiency EQE). ; Versatility ohmic contact layer, nano-pillars, nano-rod, nanowires