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Control circuit capable of varying pulse width according to the operation mode of semiconductor memory device and internal power supply voltage generator including the same
Control circuit capable of varying pulse width according to the operation mode of semiconductor memory device and internal power supply voltage generator including the same
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机译:能够根据半导体存储装置的操作模式改变脉冲宽度的控制电路以及包括该控制电路的内部电源电压产生器
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摘要
PURPOSE: A control circuit for varying width of a pulse according to an operating method of a semiconductor memory device and an internal supply voltage generation circuit including the same are provided to supply internal supply voltages by changing width of pulses. CONSTITUTION: A control circuit(300) includes a plurality of pulse generators(310,330,340,350), a plurality of expanded pulse generators(360,370,380,390), and a logical sum circuit(G1). The pulse generators(310,330,340,350) and the expanded pulse generators(360,370,380,390) are formed with the same components. The pulse generators(310,330,340,350) generate selectively the first pulses(P1_1,P1_2,P1_3,P1_4) or the second pulses(P1E_1,P1E_2,P1E_3,P1E_4) in response to sensing signals(PS1,PS2,PS3,PS4) and a sense signal(P3). The width of the second pulses(P1E_1,P1E_2,P1E_3,P1E_4) are wider than the width of the first pulses(P1_1,P1_2,P1_3,P1_4). The first pulses(P1_1,P1_2,P1_3,P1_4) and the second pulses(P1E_1,P1E_2,P1E_3,P1E_4) are applied to drivers for supplying interval supply voltages of four memory banks. The expanded pulse generators(360,370,380,390) generate extended pulses(P2_1,P2_2,P2_3,P2_4) in response to the first pulses(P1_1,P1_2,P1_3,P1_4) or the second pulses(P1E_1,P1E_2,P1E_3,P1E_4).
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