METHOD FOR FORMING Ti FILM AND TiN FILM, CONTACT STRUCTURE AND COMPUTER READABLE STORING MEDIUM

摘要

A cleaning process is performed on the surface of a nickel silicide film serving as an underlayer. Then, a Ti film is formed to have a film thickness of not less than 2 nm but less than 10 nm by CVD using a Ti compound gas. Then, the Ti film is nitrided. Then, a TiN film is formed on the Ti film thus nitrided, by CVD using a Ti compound gas and a gas containing N and H.