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SIMULATION METHOD AND APPARATUS AT GATE LEVEL, METHOD OF DESIGING ICS, METHOD OF DESIGNING ICS INCLUDING VOLTAGE ISLANDS, AND METHOD OF DESIGNING CHIPS
SIMULATION METHOD AND APPARATUS AT GATE LEVEL, METHOD OF DESIGING ICS, METHOD OF DESIGNING ICS INCLUDING VOLTAGE ISLANDS, AND METHOD OF DESIGNING CHIPS
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机译:门级的仿真方法和装置,ICS设计方法,包括电压岛的ICS设计方法和芯片设计方法
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摘要
A dynamic simulation method in a gate level, a simulation apparatus of the gate level, a design method of an IC(Integrated Circuit), a method for designing an IC chip including a voltage island and a chip designing method are provided to acquire exact simulation results from a multi voltage design or a power gating design by performing simulation in consideration of variable power and ground states. A net-list is provided, wherein the net-list includes the information on variable power and ground(S110). A circuit model including the variable power and ground is provided(S120). A simulation is performed on the net-list by using the circuit model(S130). The results of the simulation are changed according to the states of power or ground. The simulation is performed by using a Verilog HDL(Hardware Description Language).
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