Photolithographic mask optical analysis method for use in semiconductor industry, involves classifying flaws on mask based on comparison of images of defined flaws during confocal and dark field lighting

摘要

The method involves taking up a cutout and images of an object (9) e.g. mask, during confocal and dark field lighting. The images are mixed and an error matrix is generated. The images of defined flaws are compared during the confocal lighting, and the images of the defined flaws are separately compared during the dark field lighting, based on the matrix. The flaws on the object are classified based on the comparison result. An independent claim is also included for a device for an optical analysis of a structured surface.