首页> 外国专利> Fully-buffered-dual-in-line memory module for e.g. read-write-memory, has one of input interfaces to receive written or command data in reverse direction, and one of output interfaces to transmit read data in forward direction

Fully-buffered-dual-in-line memory module for e.g. read-write-memory, has one of input interfaces to receive written or command data in reverse direction, and one of output interfaces to transmit read data in forward direction

机译:全缓冲双列直插式内存模块,例如读写存储器,具有一个输入接口以接收反向的写或命令数据,以及一个输出接口以发送正向的读取数据

摘要

The module has a memory core (120) for reading and writing of data, and an input interface (111) for receiving the read data in a forward direction. An output interface (112) transmits the written or command data in a reverse direction. Another input interface (114) receives the written or command data in the reverse direction, where another output interface (115) transmits the read data in the forward direction. Independent claims are also included for the following: (1) a method of operating a memory device (2) a memory controller for a memory device.
机译:该模块具有用于读取和写入数据的存储核心(120),以及用于向前接收接收的数据的输入接口(111)。输出接口(112)沿相反的方向发送写入或命令数据。另一个输入接口(114)沿反方向接收写入或命令数据,其中另一个输出接口(115)沿正向方向发送读取的数据。还包括以下方面的独立权利要求:(1)操作存储设备的方法(2)用于存储设备的存储控制器。

著录项

  • 公开/公告号DE102005043547A1

    专利类型

  • 公开/公告日2007-03-29

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE20051043547

  • 发明设计人 RISSE GERHARD;

    申请日2005-09-13

  • 分类号G11C7/10;

  • 国家 DE

  • 入库时间 2022-08-21 20:29:44

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