Bit line voltage supplying method for e.g. random access memory, involves loading bit line with output potential and providing charging devices that are activated and deactivated based on potential of virtual voltage supply line

摘要

The method involves providing a bit line (6) and loading the bit line with an output potential. A read operation is performed for reading information over the bit line. Charging devices (13, 15) of the bit line are activated and deactivated based on potential of a virtual voltage supply line (4). The devices are deactivated only if a difference between a supply potential and the potential of the supply line falls below a preset value. Independent claims are also included for the following: (1) a memory arrangement with a charging device (2) a semiconductor circuit with a memory arrangement.