Electrical contacts manufacturing method for e.g. dynamic random access memory cell, involves applying spacer layer on upper side wall region of conductors before arranging contacts, where spacer layer separates conductors from contacts

摘要

The method involves arranging contacts adjacent to electrical conductors of a silicon substrate and electrically separating the contacts from the conductors. A spacer layer (100) e.g. oxide layer, is coated on a side wall region of the conductors before arranging the contacts. The spacer layer separates the conductors from the contacts. A protection cap made of a dielectric material e.g. silicon nitride, is applied on sides of the conductors. An upper side wall section (200) of the protection cap and the side wall region of the conductors are provided with the spacer layer. An independent claim is also included for an electronic component e.g. dynamic random access memory (DRAM) cell, comprising a field effect transistor.