Memory cell e.g. dynamic RAM cell, has control switch comprising delimitation unit to limit current flowing through solid electrolyte layer to given amount of electrical charge for writing process

摘要

The cell has a control switch arranged between a programmable solid electrolyte layer (3) and a write line. The control switch has a control input connected with a select line. The control switch has a delimitation unit to limit current flowing through the solid electrolyte layer to a given amount of electrical charge for a writing process. The solid electrolyte layer is connected with a potential source. An oxide layer is provided between a floating gate and the solid electrolyte layer. An independent claim is also included for a method for writing data into a memory cell.