Semiconductor radiation source of high power output density for hardening adhesives, coatings/sealing compounds, comprises a carrier cooled by a flow of coolant, and temperature sensors contacted with a cooling medium

摘要

The semiconductor radiation source of high power output density for the hardening of adhesives, coatings or sealing compounds, comprises a carrier (12) cooled by a flow of coolant, on which an arrangement of semiconductor emitter (11) is attached, two temperature sensors contacted with cooling medium (19), a heat source for the temperature sensors, a monitoring circuit (25) subjected with the measuring signal of the temperature sensors, and an interface for the transmission of the signal of the monitoring circuit. The semiconductor radiation source of high power output density for the hardening of adhesives, coatings or sealing compounds, comprises a carrier (12) cooled by a flow of coolant, on which an arrangement of semiconductor emitter (11) is attached, two temperature sensors contacted with cooling medium (19), a heat source for the temperature sensors, a monitoring circuit (25) subjected with the measuring signal of the temperature sensors, and an interface for the transmission of the signal of the monitoring circuit. The monitoring circuit produces a signal, which corresponds to the flow of coolant derived from a temperature rise. The heat source delivers a temporally self-changing heat quantity and the monitoring circuit determines the cooling medium-flow velocity from the difference of the sensor temperature with higher and with lower heat emission. One of the temperature sensors is arranged in a distance of 5 mm of the semiconductor emitter and arranged outside of the flow of coolant contacted with the carrier. The monitoring circuit produces a signal, when the flow of coolant falls below a pre-set value. The signal causes a decrease of an energizing current of the semiconductor emitter. In continuous operation the heat transfer coefficient from the loss factor density of the radiation source and the difference between the maximally arising temperature at the p-n junction of the semiconductor emitter and the effective temperature of a heat sink, to which the energy dissipation is transferred, amounts to 0.5 W/cm2K. The carrier consists of an electrically non-conductive ceramic. On the carrier solid assembly places are intended, which serve for the admission of either a semiconductor emitter of an edge length of 1.1 mm or two-semiconductor emitter with an edge length of 0.35 mm. The radiation of the semiconductor emitter is coupled in parabolic-shaped reflector body provided for the decrease of the reflected beam angle in its neighboring part of the semiconductor emitter. The reflector body consists of a transparent plastic with the emission wavelength of the semiconductor emitter. The reflector body at its radiation discharge surface carries a transparent cover from material, which is harder than the reflector body.