首页> 外国专利> Waste silicon selecting method, involves determining if impurity unit is present in pieces of waste silicon on basis of received spectral data, where pieces that contain impurity unit are selected on basis of determination

Waste silicon selecting method, involves determining if impurity unit is present in pieces of waste silicon on basis of received spectral data, where pieces that contain impurity unit are selected on basis of determination

机译:废硅选择方法,涉及根据接收到的光谱数据确定废硅片中是否存在杂质单元,其中,基于确定来选择包含杂质单元的片

摘要

The method involves verifying individual pieces of n-type waste silicon by an energy dispersive X-ray fluorescence analyzer. A determination is made if a certain impurity unit is present in the pieces of waste silicon on a basis of received spectral data. The pieces of waste silicon that contain the impurity unit are selected on the basis of determination. Concentration of the unit is computed based on specific electrical resistance.
机译:该方法包括通过能量色散X射线荧光分析仪验证n块废硅的碎片。根据接收到的光谱数据确定在废硅片中是否存在某种杂质单元。基于确定选择包含杂质单元的废硅片。单位浓度基于比电阻计算。

著录项

  • 公开/公告号DE102006023446A1

    专利类型

  • 公开/公告日2006-11-23

    原文格式PDF

  • 申请/专利权人 IIS MATERIALS CORPORATION LTD.;

    申请/专利号DE20061023446

  • 发明设计人 SHIMADA TAKEHIKO;YAMAUCHI NORICHIKA;

    申请日2006-05-18

  • 分类号G01N23/223;G01N27/04;

  • 国家 DE

  • 入库时间 2022-08-21 20:29:13

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