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Device for growing large volume single crystals has heating element arranged on side walls of melt crucible to prevent lateral radial heat flow

机译:用于生长大体积单晶的装置具有布置在熔体坩埚的侧壁上的加热元件,以防止横向径向热流

摘要

Device for growing large volume single crystals comprises a housing (10) in which a melt crucible (20) with side walls (22), a base (24), a top opening (26) facing the base and optionally a lid (28) are located; and at least one heating element (50, 50'). At least one heating element is arranged on the side walls of the melt crucible (20) to prevent lateral radial heat flow. An independent claim is also included for a process for growing large volume single crystals using the above device. Preferred Features: The elements arranged on the side walls prevent lateral heat flow so that a planar solid/liquid phase boundary surface is formed during crystal growth which has a bending radius of at least 1 m. The base of the crucible has a conical shape.
机译:用于生长大体积单晶的装置包括:壳体(10),其中具有侧壁(22)的熔体坩埚(20),底部(24),面向底部的顶部开口(26)以及可选地盖(28)位于;至少一个加热元件(50、50')。在熔体坩埚(20)的侧壁上布置至少一个加热元件,以防止侧向径向热流。还包括使用上述装置生长大体积单晶的方法的独立权利要求。优选特征:布置在侧壁上的元件防止横向热流,从而在晶体生长期间形成平坦的固/液相界面,该界面的弯曲半径至少为1m。坩埚的底部为圆锥形。

著录项

  • 公开/公告号DE20122681U1

    专利类型

  • 公开/公告日2007-02-08

    原文格式PDF

  • 申请/专利权人 SCHOTT AG;

    申请/专利号DE2001222681U

  • 发明设计人

    申请日2001-03-02

  • 分类号C30B11/00;C30B29/12;

  • 国家 DE

  • 入库时间 2022-08-21 20:29:06

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