首页> 外国专利> Acoustically coupled thin film - transformer with a piezoelectric material, which, opposite c - axen orientation

Acoustically coupled thin film - transformer with a piezoelectric material, which, opposite c - axen orientation

机译:声耦合薄膜-带有压电材料的变压器,与c-轴方向相反

摘要

An embodiment of the acoustically-coupled transformer has first and second stacked bulk acoustic resonators (SBARs) (206,208) each having a stacked pair of film bulk acoustic resonators (FBARs) with an acoustic decoupler between the FBARs . Each FBAR has opposed planar electrodes with piezoelectric material between the electrodes. A first electrical circuit connects one FBARs of the first SBAR to one FBAR of the second SBAR, and a second electrical circuit connects the other FBAR of the first SBAR to the other FBAR of the second SBAR. The c-axis of the piezoelectric material of one of the FBARs is opposite in direction to the c-axes of the piezoelectric materials of the other three FBARs. This arrangement substantially reduces the amplitude of signal-frequency voltages across the acoustic decouplers and significantly improves the common mode rejection of the transformer. This arrangement also allows conductive acoustic decouplers to be used, increasing the available choice of acoustic decoupler materials.
机译:声耦合变压器的实施例具有第一和第二堆叠的体声谐振器(SBAR)(206,208),每个堆叠体都具有成对的膜体声谐振器(FBAR)的堆叠对,并且在FBAR之间具有声解耦器。每个FBAR具有相对的平面电极,在电极之间具有压电材料。第一电路将第一SBAR的一个FBAR连接到第二SBAR的一个FBAR,第二电路将第一SBAR的另一个FBAR连接到第二SBAR的另一个FBAR。 FBAR之一的压电材料的c轴与其他三个FBAR的压电材料的c轴方向相反。这种布置大大降低了声解耦器两端的信号频率电压的幅度,并显着提高了变压器的共模抑制性能。这种布置还允许使用导电声解耦器,从而增加了声解耦器材料的可用选择。

著录项

  • 公开/公告号DE602004002363T2

    专利类型

  • 公开/公告日2007-09-20

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE20046002363T

  • 发明设计人

    申请日2004-07-01

  • 分类号H03H9/58;

  • 国家 DE

  • 入库时间 2022-08-21 20:28:13

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号