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Method for the calibration and optimization of a 2 - three-dimensional modeling of patterns

机译:二维图案三维建模的校准和优化方法

摘要

A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction.
机译:一种用于生成光刻掩模的方法,该光刻掩模利用成像系统将掩模中形成的图案光学地转印到基板上。该方法包括以下步骤:(a)定义一组以数据格式表示的校准图案; (b)利用给定的成像系统在基板上印刷校准图案; (c)确定与成像在基板上的校准图案相对应的第一组轮廓图案; (d)产生系统伪强度函数,其近似于成像系统的成像性能; (e)通过利用系统伪强度函数来定义校准图案将如何在基板上成像来确定第二组轮廓图案; (f)比较第一组轮廓图案和第二组轮廓图案以确定它们之间的差异; (g)调整系统伪强度函数,直到第一组轮廓图案与第二组轮廓图案之间的差低于预定标准为止; (h)利用调整后的系统伪强度函数来修改掩模,以提供光学邻近校正。

著录项

  • 公开/公告号DE60214506T2

    专利类型

  • 公开/公告日2007-05-16

    原文格式PDF

  • 申请/专利权人

    申请/专利号DE2002614506T

  • 发明设计人

    申请日2002-10-09

  • 分类号G03F7/20;G03F1/14;

  • 国家 DE

  • 入库时间 2022-08-21 20:27:57

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