PROBLEM TO BE SOLVED: To easily inspect local variance in a pattern of an exposure mask only by measuring diffracted light without using a microscope.;SOLUTION: The inspection method for local variance in a mask pattern is applied to a mask pattern which is formed on an exposure mask 20 and to be transferred onto a wafer by a projection exposure device, so as to inspect local variance of the pattern, and the method includes steps of: irradiating a regular pattern 21 formed on the mask 20 with light from a point light source 10 and monitoring the diffracted light with respect to the point light source 10; calculating the specification limit of the local variance by simulation with respect to the dimension and position of the regular pattern 21; calculating the diffracted light with respect to the point light source 10 on the mask 20 having the local variance corresponding to the specification limit; and comparing the monitored diffracted light and calculated diffracted light.;COPYRIGHT: (C)2008,JPO&INPIT
展开▼
