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EXCIMER VACUUM ULTRA-VIOLET LIGHT IRRADIATION TREATMENT APPARATUS

机译:准分子真空紫外光辐照治疗仪

摘要

PROBLEM TO BE SOLVED: To provide an excimer vacuum ultra-violet light irradiation treatment apparatus for effectively irradiating a wafer with excimer vacuum ultra-violet light emitted from an excimer vacuum ultra-violet light lamp and for successfully changing quality of a thin film of wafer by utilizing the vacuum ultra-violet light.;SOLUTION: The excimer vacuum ultra-violet light irradiation treatment apparatus 10 includes a chamber 12 for storing a wafer 16, a vacuum pump 13 for maintaining the inside of the chamber 12 to the vacuum condition, a gas supplier 14 for supplying nitrogen into the chamber 12, a heater 15 for heating the wafer 16 stored in the chamber 12 to the predetermined temperature, and an excimer vacuum ultra-violet light lamp 21 for irradiating the thin film of wafer 16 stored in the chamber 12 with the excimer vacuum ultra-violet light. The apparatus 10 directly applies the vacuum ultra-violet light to the thin film of wafer 16 stored within the chamber 12 that is maintained in the vacuum condition, while the lamp 21 is exposed within the chamber 12.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种准分子真空紫外光照射处理设备,以用准分子真空紫外灯发出的准分子真空紫外光有效地照射晶片,并成功地改变晶片薄膜的质量。解决方案:准分子真空紫外线照射处理设备10包括一个用于容纳晶片16的腔室12,一个用于将腔室1​​2内部保持在真空状态的真空泵13,气体供应器14用于向腔室12内供应氮气,加热器15用于将腔室1​​2中存储的晶片16加热至预定温度,并且准分子真空紫外灯21用于照射存储在腔室12中的晶片16的薄膜。准分子真空紫外线照射腔室12。装置10将真空紫外线直接施加到保持在真空条件下的腔室12中存储的晶片16的薄膜,而灯21暴露在腔室12中。;版权:(C)2008,日本特许厅

著录项

  • 公开/公告号JP2008140830A

    专利类型

  • 公开/公告日2008-06-19

    原文格式PDF

  • 申请/专利权人 APEX CORP;MD KOMU:KK;

    申请/专利号JP20060323269

  • 发明设计人 HAYAMA TAKASHI;SAGAMI DAISUKE;

    申请日2006-11-30

  • 分类号H01L21/304;G21K5/00;B08B7/00;H01J65/00;

  • 国家 JP

  • 入库时间 2022-08-21 20:25:34

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