首页> 外国专利> HIGHLY SATURATED RED LIGHT EMITTING Mn(IV)-ACTIVATED FLUORESCENT AND ITS MANUFACTURING PROCESS

HIGHLY SATURATED RED LIGHT EMITTING Mn(IV)-ACTIVATED FLUORESCENT AND ITS MANUFACTURING PROCESS

机译:锰(IV)活化的高饱和红光荧光粉及其制备方法

摘要

PROBLEM TO BE SOLVED: To provide a light emitting device having a fluorescent composition radiatively combined with a semiconductor light source emitting a radiation of approximately 250-500 nm.;SOLUTION: The fluorescent composition of the light emitting device is selected from among the group consisting of Mg14(Ga(5-a)Mna)O24, Sr(Ge(4-b)Mnb)O9, Mg2(Ti(1-c)Mnc)O4, Zn2(Ti(1-d)Mnd)O4, SrMg(Al(10-e)Mne)O17 and Y3(Ga(5-f)Mnf)O12, wherein a is 0.05-1; b is 0.25-2; c and d are each 0.05-2; and e and f are each 0.05-1.5. The semiconductor light source of the light emitting device is a light emitting diode or the like containing nitrogen.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种发光器件,该发光器件具有与发射约250-500 nm的辐射的半导体光源辐射结合的荧光成分。解决方案:该发光器件的荧光成分选自由以下组成的组: Mg 14 (Ga (5-a) Mn a )O 24 ,Sr(Ge (4-b) Mn b )O 9 ,Mg 2 (Ti (1-c) Mn c )O 4 ,Zn 2 (Ti (1-d) Mn d )O 4 ,SrMg(Al (10-e) Mn e )O 17 和Y 3 (Ga (5-f) Mn f )O 12 ,其中a为0.05-1; b为0.25-2; c和d分别为0.05-2; e和f分别为0.05-1.5。发光器件的半导体光源是包含氮的发光二极管等。版权所有:(C)2008,JPO&INPIT

著录项

  • 公开/公告号JP2008069334A

    专利类型

  • 公开/公告日2008-03-27

    原文格式PDF

  • 申请/专利权人 JIAOTONG UNIV;

    申请/专利号JP20060322153

  • 发明设计人 CHIN TOMEI;LUO JUIH-TZER;

    申请日2006-11-29

  • 分类号C09K11/08;C09K11/66;C09K11/67;C09K11/64;C09K11/80;C09K11/62;H01L33/00;

  • 国家 JP

  • 入库时间 2022-08-21 20:24:02

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