首页> 外国专利> METHOD FOR PRODUCING P-TYPE SEMICONDUCTOR-STRONTIUM ALUMINATE INCLUSION FULLERENE, METHOD FOR PRODUCING N-TYPE SEMICONDUCTOR-STRONTIUM ALUMINATE INCLUSION FULLERENE, METHOD FOR PRODUCING POWDERY POWER GENERATION PIGMENT, AND METHOD FOR PRODUCING POWER GENERATION INK

METHOD FOR PRODUCING P-TYPE SEMICONDUCTOR-STRONTIUM ALUMINATE INCLUSION FULLERENE, METHOD FOR PRODUCING N-TYPE SEMICONDUCTOR-STRONTIUM ALUMINATE INCLUSION FULLERENE, METHOD FOR PRODUCING POWDERY POWER GENERATION PIGMENT, AND METHOD FOR PRODUCING POWER GENERATION INK

机译:生产p型半导体-锶-锶包容富勒烯的方法,生产n型半导体-锶-锶包容富勒烯的方法,生产粉末状发电颜料的方法以及生产发电用墨的方法

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a P/N-type semiconductor-strontium aluminate inclusion fullerene, in which no restriction of design or form is required and by which the processing cost can be reduced and an energy production system can be povided.;SOLUTION: The method for producing the P-type semiconductor-strontium aluminate inclusion fullerene includes: an opening part forming process for forming an opening part in the outer shell of a P-type semiconductor inclusion fullerene by fusing oxygen with a portion of the outer shell of the fullerene in a carbon reduction state to oxidize the portion, a strontium aluminate housing process for housing strontium aluminate into the inside from the opening part by holding the P-type semiconductor inclusion fullerene at a high temperature high pressure state; a contraction closing process for contracting and closing the ring of the opening part in the outer shell by subjecting the opening part in the outer shell of the P-type semiconductor inclusion fullerene housing the strontium aluminate therein to a photoreaction and using titanium tetrachloride and zinc; and an opening part closing process for closing the opening part by heating the P-type semiconductor inclusion fullerene.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种生产P / N型半导体铝酸锶包裹体富勒烯的方法,该方法不需要设计或形式上的限制,并且可以降低加工成本并可以制造能量生产系统。解决方案:用于生产P型半导体铝酸锶包裹体富勒烯的方法包括:开口部分形成工艺,用于通过将氧与一部分P半导体半导体富勒烯融合而在P型半导体包裹体富勒烯的外壳中形成开口部分。在碳还原状态的富勒烯的外壳氧化该部分的过程中,通过将P型半导体夹杂物富勒烯保持在高温高压状态,从开口部将铝酸锶容纳在内部的铝酸锶容纳工序。通过使其中容纳铝酸锶的P型半导体夹杂物富勒烯的外壳中的开口部分进行光反应并使用四氯化钛和锌,使外壳中的开口部分的环收缩和闭合的收缩闭合工艺; ;以及通过加热P型半导体夹杂物富勒烯来封闭开口部分的开口部分封闭工艺。;版权所有:(C)2008,日本特许厅&INPIT

著录项

  • 公开/公告号JP2007297262A

    专利类型

  • 公开/公告日2007-11-15

    原文格式PDF

  • 申请/专利权人 UMEDA SHINICHI;

    申请/专利号JP20060347062

  • 发明设计人 UMEDA SHINICHI;AKITANI KAORU;

    申请日2006-12-25

  • 分类号C01B31/02;C09D11/00;

  • 国家 JP

  • 入库时间 2022-08-21 20:23:29

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