LIGHT EMITTING DIODE AND ITS MANUFACTURING METHOD, ILLUMINATION SOURCE CELL UNIT, LIGHT EMITTING DIODE BACKLIGHT, LIGHT EMITTING DIODE LIGHTING DEVICE, LIGHT EMITTING DIODE DISPLAY, ELECTRONIC INSTRUMENT, ELECTRONIC APPARATUS, AND MANUFACTURING METHOD OF THE ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a light-emitting diode which exhibits an extremely high luminance efficiency and can be manufactured inexpensively through single epitaxial growth, and to provide its manufacturing method.;SOLUTION: Convex portions 12 are formed with SiO₂ or the like on one major surface of a substrate 11 such as a sapphire substrate. A nitride-based group-III-V compound semiconductor layer 15 is grown in concave portions 13 between the convex portions 12 through a stage in which its cross sections are triangular having the bottoms of the concave portions 13 as their bases. After laterally growing the nitride-based group-III-V compound semiconductor layer 15, a nitride-based group-III-V compound semiconductor layer including an active layer 17 is grown thereon. Threading dislocations 19 which are produced in the convex portions 12 and/or parts corresponding to the center between adjacent concave portions 13 of the layers are removed by etching them and forming grooves 20.;COPYRIGHT: (C)2008,JPO&INPIT