MASK DESIGN METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME, AND MASK DESIGN SYSTEM

摘要

PROBLEM TO BE SOLVED: To efficiently set a bias correction amount on forming a transfer pattern of a hole and to stably form a hole as designed.;SOLUTION: When a hole pattern to be formed above a substrate is formed, a bias correction amount in the formation of a correction object hole 101 is set by extracting a correction reference hole 103 present in a region influencing the formation of the correction object hole 101 and considering the plane arrangement of the extracted correction reference hole 103.;COPYRIGHT: (C)2008,JPO&INPIT