首页> 外国专利> COATING COMPOSITION FOR FORMING HIGHLY DIELECTRIC THIN FILM, ITS PREPARATION METHOD AND HIGHLY DIELECTRIC FILM FORMED USING THE SAME

COATING COMPOSITION FOR FORMING HIGHLY DIELECTRIC THIN FILM, ITS PREPARATION METHOD AND HIGHLY DIELECTRIC FILM FORMED USING THE SAME

机译:形成高介电薄膜的涂料组合物,其制备方法和使用该薄膜形成的高介电薄膜

摘要

PROBLEM TO BE SOLVED: To provide a method for efficiently preparing a coating composition for forming a highly dielectric thin film, which yields a uniform coating film due to an increased wettability, yields a smooth film surface due to a moderate viscosity, achieves an improved handleability due to a moderate drying speed and an improved productivity for forming a thick film due to the increased wettability and viscosity and is capable of forming a dielectric thin film which does not crack, shows little shrinkage and is excellent in dielectric characteristics.;SOLUTION: The method comprises a step of preparing an organic acid salt solution (A) of an alkaline earth metal element using a specific solvent mixture under a specific condition, a step of preparing an alkoxide solution (B) of at least one element chosen from the group consisting of titanium, tin and zirconium using a specific organic solvent under a specific condition, a step of synthesizing a composite organic acid salt solution (C) using the organic acid salt solution (A) and the alkoxide solution (B) under a specific condition and a step of adjusting the metal concentration using a diluent of a specific composition.;COPYRIGHT: (C)2008,JPO&INPIT
机译:解决的问题:提供一种有效地制备用于形成高介电薄膜的涂料组合物的方法,该方法由于增加的润湿性而产生均匀的涂膜,由于适度的粘度而产生光滑的膜表面,从而获得改善的可操作性由于适度的干燥速度和增加的润湿性和粘度而提高了用于形成厚膜的生产率,并且能够形成不破裂,几乎不收缩且介电特性优异的介电薄膜。该方法包括以下步骤:使用特定溶剂混合物在特定条件下制备碱土金属元素的有机酸盐溶液(A);制备至少一种选自以下组的元素的醇盐溶液(B)的步骤:特定条件下使用特定有机溶剂合成钛,锡和锆的步骤,即合成复合有机酸盐溶胶的步骤(C)在特定条件下使用有机酸盐溶液(A)和醇盐溶液(B)以及使用特定组成的稀释剂调节金属浓度的步骤。;版权所有:(C)2008,JPO&INPIT

著录项

  • 公开/公告号JP2008179516A

    专利类型

  • 公开/公告日2008-08-07

    原文格式PDF

  • 申请/专利权人 SUMITOMO METAL MINING CO LTD;

    申请/专利号JP20070015224

  • 发明设计人 TAKANASHI SHOJI;TAKATSUKA YUJI;

    申请日2007-01-25

  • 分类号C01G23/00;C04B35/46;H01L21/316;C04B35/49;H01G4/12;

  • 国家 JP

  • 入库时间 2022-08-21 20:22:21

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号