METHOD FOR PRODUCTION OF SEMICONDUCTOR SINGLE CRYSTAL USING CZOCHRALSKI METHOD, AND SEMICONDUCTOR SINGLE CRYSTAL INGOT AND WAFER PRODUCED BY THE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for production of a semiconductor single crystal using the Czochralski method in which productivity is improved compared with a conventional one, by expanding the specific resistance profile along the longitudinal direction of a crystal to increase the prime length of the single crystal, and to provide a semiconductor single crystal ingot produced by the method and a wafer prepared from the ingot.;SOLUTION: A seed crystal is immersed in the melt SM of a semiconductor raw material and a dopant material contained in a crucible 10, and then a semiconductor single crystal C is grown by gradually pulling the seed crystal upward while rotating. In this case, the specific resistance profile which is theoretically calculated along the longitudinal direction of the crystal C by applying to the crucible, a cusp asymmetric magnetic field in which the magnetic field intensity at an upper part is different from that at a lower part is expanded along the longitudinal direction of the crystal C using the ZGP (Zero Gauss Plane) in which the vertical component of the magnetic field is zero as a basis.;COPYRIGHT: (C)2008,JPO&INPIT