The carbon formation generation process which it heats treats at temperature above the 1200

摘要

PPROBLEM TO BE SOLVED: To form a surface excellent in flatness by reducing the fine unevenness, such as polishing scratches, of the surface of a silicon carbide substrate without using gaseous hydrogen or gaseous hydrochloric acid. PSOLUTION: The silicon carbide substrate 7 having a flat surface 8 is produced, and then a base material 1 of silicon carbide is subjected to heat treatment under an atmospheric pressure of ≤10-2 Torr or in an inert gas atmosphere of 10SP-2/SPto 7,600 Torr at a temperature of ≥1,200 and ≤2,200°C so as to form a carbon layer 4 on the surface 2 of the base material 1. Further, the carbon layer 4 is removed. It is preferable that the the carbon layer 4 is removed by oxidizing the base material under an atmosphere containing oxygen at a temperature of ≤1,300°C and then the formed oxide film 6 is removed by etching. PCOPYRIGHT: (C)2004,JPO