The improved which uses shearing stress (ENHANCED) PFET

摘要

Topic Improve the carrier mobility of the active device.SolutionsSemiconductor device structure in order to form the channel territory in one part of gate structure and this baseplate which are arranged with respect to one part of the baseplate, adjoining to this one part, adjoining to the source territory and the drain territory and the source territory and the drain territory which are arranged directly, includes with the trench isolation region which is arranged. The trench isolation region one part includes the stress material at least, as a result, this material generates shearing stress inside the channel territory. Selective figure Figure 2