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Recycle processing method of photoresist development waste liquid

机译:光刻胶显影废液的循环处理方法

摘要

PROBLEM TO BE SOLVED: To provide an easy and efficient regenerating method of a developer waste liquid of a photoresist. SOLUTION: In this method to treat a developer waste liquid of a photoresist essentially containing a photoresist and tetraalkyl ammonium (TAA) ion, at least a process to concentrate TAA ion by electrodialysis and/or electrolysis and a process to adsorb and remove impurities by bringing the liquid into contact with an ion exchange resin are carried out. The ion exchange resin is preferably an anion exchange resin and a hydrogen ion type (H-type) and/or TAA ion type (TAA) cation exchange resin. The impurities are residual photoresist, other anion component and cation component such as Na+ . Thereby, a soln. of tetraalkyl ammonium hydroxide of high purity which can be reused as a photoresist developer is regenerated and recovered from the developer waste liquid of a photoresist.
机译:解决的问题:提供一种简单有效的光刻胶显影液废液再生方法。解决方案:该方法用于处理主要包含光致抗蚀剂和四烷基铵(TAA)离子的光致抗蚀剂的显影剂废液,至少是通过电渗析和/或电解浓缩TAA离子的过程以及通过吸附去除杂质的过程。使液体与离子交换树脂接触。离子交换树脂优选为阴离子交换树脂和氢离子型(H型)和/或TAA离子型(TAA)阳离子交换树脂。杂质是残留的光刻胶,其他阴离子组分和阳离子组分,例如Na +。从而,一个Soln。可以用作光致抗蚀剂显影剂的高纯度四烷基氢氧化铵可从光致抗蚀剂的显影剂废液中再生和回收。

著录项

  • 公开/公告号JP4085987B2

    专利类型

  • 公开/公告日2008-05-14

    原文格式PDF

  • 申请/专利权人 オルガノ株式会社;

    申请/专利号JP20040031598

  • 发明设计人 菅原 広;逸見 ひろみ;

    申请日2004-02-09

  • 分类号G03F7/30;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-21 20:19:39

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