首页> 外国专利> Integrated parallel Peltier-Seebeck element chip and a manufacturing method thereof, and an integrated Peltier-Seebeck element panel or sheet, as well as direct energy conversion systems and energy transfer system,

Integrated parallel Peltier-Seebeck element chip and a manufacturing method thereof, and an integrated Peltier-Seebeck element panel or sheet, as well as direct energy conversion systems and energy transfer system,

机译:集成的并行帕尔贴-塞贝克元件芯片及其制造方法,集成的珀尔帖-塞贝克元件面板或片材以及直接能量转换系统和能量传输系统,

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for producing a multitude of integrated parallel Peltier-Seebeck element chips simultaneously.;SOLUTION: A first conductive member and a second conductive member, having different Seebeck coefficient, are formed on an insulating substrate and these are connected through an ohmmic contact and the surface connected through the ohmmic contact are covered by the plate of a material, excellent in thermal conductivity and provided with electric insulation on the surfaces connected by the ohmmic contact or an aluminum plate, for example, provided with the electrical insulation on the surface thereof through alumite processing or the like. Then, bonding wires are connected to first and second conductive members on the opposite side through the ohmmic contact, to insulate the bonding wires from each other and obtain the output terminal of integrated parallel Peltier-Seebeck element chip. The energy converting device from electricity into heat as well as the heat energy transfer device are obtained by connecting a plurality of integrated parallel Peltier-Seebeck element chips produced in such a manner by serial or parallel cables.;COPYRIGHT: (C)2006,JPO&NCIPI
机译:要解决的问题:提供一种同时生产大量集成的并行珀耳帖-塞贝克元件芯片的制造方法。解决方案:在绝缘基板上形成具有不同塞贝克系数的第一导电部件和第二导电部件,这些通过欧姆接触连接,并且通过欧姆接触连接的表面被材料板覆盖,该材料板具有优异的导热性并且在通过欧姆接触或铝板连接的表面上具有电绝缘,例如,通过矾土处理等在其表面上进行电绝缘。然后,通过欧姆接触将键合线连接到相对侧上的第一和第二导电构件,以使键合线彼此绝缘,并获得集成的并行珀耳帖-塞贝克元件芯片的输出端子。通过以串行或并行电缆连接以这种方式生产的多个集成的并行Peltier-Seebeck元件芯片,可以获得从电到热的能量转换设备以及热能传递设备。版权所有:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP4141415B2

    专利类型

  • 公开/公告日2008-08-27

    原文格式PDF

  • 申请/专利权人 近藤 義臣;株式会社明電舎;

    申请/专利号JP20040194596

  • 发明设计人 近藤 義臣;

    申请日2004-06-30

  • 分类号H01L35/34;H01L23/38;H01L35/14;H01L35/30;H01L35/32;

  • 国家 JP

  • 入库时间 2022-08-21 20:19:30

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号