Production method of front gate type SOI-MOSFET

摘要

Topic Source/drain expansion and the front gate (front gate) oneself the back gate which was made to adjust is included, it regards the production method of the FD type SOI-CMOS device.SolutionsAs for SOI-CMOS technology, as for polysilicon namely the poly- Si back gate, it is used in order to control the threshold voltage of the hurontogeto device, nMOS and the pMOS back gate are done, in independence, and in the front gate and independence, the switch mutually.Especially, the back gate, the front gate of the device and oneself offers the production method of the back gate FD type CMOS device which was adjusted to source/drain expansion. The back gate FD type CMOS device is produced the SIMOX or connection SOI- wafer, wafer bonding and thin film conversion, poly- Si etching, LP-CVD and machine chemical polishing (CMP) of making use. Selective figure Figure 17